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Same model may have multiple batches, images only for reference.
FGW50N60VD
Same model may have multiple batches, images only for reference.

FGW50N60VD

Part No FGW50N60VD
Manufacturer Fuji Electric
Catalog OEM Parts (F - I)
Description Igbt, Single, 600V, 85A, TO-247-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-247
Collector Emitter Breakdown Voltage 600 V
Collector Emitter Saturation Voltage 1.6 V
Collector Emitter Voltage (VCEO) 600 V
Element Configuration Single
Height 20.95 mm
Length 15.9 mm
Max Collector Current 50 A
Maximum Operating Temperature 175 °C
Max Power Dissipation 360 W
Min Operating Temperature -40 °C
Mount Through Hole
Number of Pins 3
REACH SVHC Unknown
RoHS Compliant
Width 5.03 mm
Win Source Part Number 1059090-FGW50N60VD
Categories OEM Parts(F-I)
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FGW50N60VD CAD Model

Description

The FGW50N60VD is a Single Element Configuration IGBT Transistor manufactured by Fuji Electric.

  • Product: FGW50N60VD
  • Manufacturer: Fuji Electric
  • Type: Single Element Configuration IGBT Transistor
  • Collector Emitter Breakdown Voltage: 600 V
  • Collector Emitter Voltage (VCEO): 600 V
  • Maximum Collector Current: 50 A
  • Collector Emitter Saturation Voltage: 1.6 V
  • Mounting Type: Through Hole Mounting
  • Maximum Operating Temperature: 175 °C
  • Min Operating Temperature: -40 °C
  • RoHS Compliant: Yes
  • Max Power Dissipation: 360 W
  • Package: TO-247 Case / Package
  • Number of Pins: 3

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