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Same model may have multiple batches, images only for reference.
2SK3687-01MR Fuji Electric
Same model may have multiple batches, images only for reference.

2SK3687-01MR

Part No 2SK3687-01MR
Manufacturer Fuji Electric
Catalog JFETs (Junction Field Effect)
Description N-CHANNEL SILICON POWER MOSFET Super FAP-G Series / Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220F
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Fuji Electric
Win Source Part Number 160240-2SK3687-01MR
Popularity Medium
Supply and Demand Status Limited
Family Name 2SK3687-01MR
Introduction Date September 04, 2002
ECCN EAR99
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian 2SK3687-01MR CAD Model

Description

2SK3687-01MR N-Channel MOSFET

The 2SK3687-01MR offers a blend of efficiency and performance, suitable for applications requiring rapid switching and high current handling. This MOSFET is engineered to meet demanding industrial standards.

  • Applications and Projects
    • PWM controllers
    • Telecommunications equipment
    • Battery management systems
    • High-frequency converters
  • Features and Benefits
    • Enhanced ruggedness for versatile applications
    • Fast recovery time for reduced delays
    • Energy-efficient, reducing overall system power consumption
    • Compact and lightweight design for portable devices
  • Additional Details
    • Type: N-Channel MOSFET
    • Max Drain-Source Voltage (Vds): Optimized for performance
    • Package: Industry-standard packaging for compatibility

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2913 $58.1085
110+ $1.0591 $116.5010
170+ $1.0268 $174.5560
235+ $0.9933 $233.4255
305+ $0.9598 $292.7390
405+ $0.8605 $348.5025
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Availability: 22,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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