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2SK2003-01MR

Part No 2SK2003-01MR
Manufacturer Fuji Electric
Catalog JFETs (Junction Field Effect)
Description N-channel MOS-FET / Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220F15
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Fuji Electric
Win Source Part Number 220140-2SK2003-01MR
Popularity Medium
Supply and Demand Status Balance
Family Name 2SK2003-01MR
Introduction Date May 30, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK2003-01MR CAD Model

Description

Overview

The 2SK2003-01MR is a versatile N-channel MOSFET designed for a variety of electronic applications, featuring a compact design without compromising on performance. Known for its stable operation and efficiency, this transistor is ideal for precision applications where size and efficiency are crucial.

Features and Benefits

  • Compact Design: Offers high performance with a smaller footprint, perfect for space-constrained projects.
  • High Switching Speed: Ensures rapid operation, reducing delays in signal processing.
  • Durable Quality: Built to withstand varying environmental conditions.
  • Low On-Resistance: Increased efficiency by reducing the energy wasted as heat.

These features make the 2SK2003-01MR an ideal choice for high-density PCB designs, where space and power efficiency are of utmost importance.

Applications

  • DC-DC Converters
  • Battery Management Systems
  • Portable Electronic Devices
  • LED Lighting Systems
  • Telecommunications Equipment

Additional Details

Adding the 2SK2003-01MR to your project delivers enhanced power management capabilities, enabling precise control and extended battery life for portable devices. The transistor is optimized for seamless integration, ensuring ease of use in refurbishment or new design applications.

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