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2SK1817MR

Part No 2SK1817MR
Manufacturer Fuji Electric
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET N-CH 100V 20A
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Fuji Electric
Win Source Part Number 159148-2SK1817MR
Popularity Low
Supply and Demand Status Limited
Family Name 2SK1817-MR
Introduction Date September 27, 2000
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK1817MR CAD Model

Description

Overview of 2SK1817MR

The 2SK1817MR is a high-efficiency N-channel MOSFET that plays an essential role in enhancing power system performance. With its cutting-edge attributes, it is specially designed to meet the stringent demands of modern electronics.

Features and Benefits

  • Enhanced gate-to-drain charge allows for quicker switching operations.
  • High current handling capability suited for demanding power applications.
  • Exceptional avalanche energy strength providing protection against unexpected power surges.
  • Reduced total gate charge facilitating lower energy expenditure.

Applications

  • Switch mode power supplies
  • Motor drives for industrial and consumer electronics
  • Electric vehicle power control
  • Telemetry systems

Additional Details

The 2SK1817MR combines high efficiency with robust performance, affording designers the opportunity to extend the capabilities of their projects. With its advanced features, this MOSFET allows for greater adaptability in dynamic operating conditions and mitigates the risks associated with power inefficiencies, yielding improved cost-effectiveness and reliability.

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