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MRF18060B

Part No MRF18060B
Manufacturer Freescale Semiconductor - NXP
Catalog OEM Parts (M - N)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 994017-MRF18060B
Categories OEM Parts(M-N)
Manufacturer Freescale Semiconductor - NXP
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian MRF18060B CAD Model

Description

The MRF18060B is a 60 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed for high-power amplifier applications in the HF and VHF bands. Manufactured by Freescale Semiconductor (now NXP Semiconductors), this transistor is known for its high gain, ruggedness, and linearity. It is commonly used in radio transmitters and other RF applications where high power and reliable performance are essential.

Applications:

  • HF/VHF Radio Transmitters
  • Industrial Heating Equipment
  • Medical RF Equipment
  • Amateur Radio Amplifiers
  • RF Generators

Features:

  • LDMOS Technology: Utilizes LDMOS technology for high gain, linearity, and ruggedness.
  • High Power Output: Delivers 60 W of output power.
  • High Gain: Provides high gain for efficient power amplification.
  • Wideband Operation: Operates over a broad frequency range in the HF/VHF bands.
  • Internal Input Matching: Includes internal input matching for simplified circuit design.
  • Thermally Enhanced Package: Designed for efficient heat dissipation.

Benefits:

  • High Performance: Delivers high power, high gain, and linear performance.
  • Simplified Design: Simplifies amplifier design with internal input matching.
  • Ruggedness: Withstands high VSWR (Voltage Standing Wave Ratio) conditions.
  • Reliable Operation: Provides reliable performance in demanding applications.
  • Efficient Heat Dissipation: Efficiently dissipates heat for stable operation.

Additional Details:

The MRF18060B requires a specific bias voltage and current. The datasheet from NXP Semiconductors provides detailed electrical characteristics, including gain, output power, efficiency, and operating voltage. The datasheet also provides information on the thermal characteristics of the transistor. Proper heat sinking is crucial for maintaining the transistor's reliability. The device is typically used in Class AB or Class C amplifier configurations. The datasheet includes application circuit examples and recommended component values. It's often chosen for applications requiring high power and robust performance in the HF/VHF range.

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