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BD170S

Part No BD170S
Manufacturer Freescale Semiconductor - NXP
Catalog OEM Parts (A - B)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 977135-BD170S
Categories OEM Parts(A-B)
Manufacturer Freescale Semiconductor - NXP
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BD170S CAD Model

Description

The BD170S is a silicon NPN epitaxial planar transistor from Freescale Semiconductor (now NXP). It's designed for use in a variety of general-purpose amplifier and switching applications. This transistor is known for its robust characteristics and reliability in various electronic circuits.

Applications:

  • General-purpose amplification
  • Switching circuits
  • Audio amplifiers
  • Power supplies
  • Driver stages in electronic circuits

Features:

  • NPN Epitaxial Planar Transistor
  • High Collector-Emitter Voltage (VCEO)
  • High Collector Current (IC)
  • Low Saturation Voltage
  • High Transition Frequency (fT)

Benefits:

  • Provides reliable amplification in various circuits.
  • Efficient switching capabilities for power control.
  • Suitable for both low and medium power applications.
  • Easy to integrate into existing circuit designs.
  • Offers a cost-effective solution for general-purpose transistor needs.

Additional Details:

The BD170S is typically available in a TO-126 package. Key specifications include a Collector-Emitter Voltage (VCEO) of around 60V, a Collector Current (IC) of approximately 2A, and a power dissipation of about 12.5W. The transition frequency (fT) is typically around 50 MHz, making it suitable for audio and other medium-frequency applications. It's designed to operate over a wide temperature range.

This transistor is commonly used in linear power supplies as a series regulator pass element. It’s also employed as a driver for higher-power transistors in audio amplifiers. Its robust design ensures a long operational life and stable performance in demanding environments. Proper heat sinking is recommended for applications with higher power dissipation to ensure that the maximum junction temperature is not exceeded.

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