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Same model may have multiple batches, images only for reference.
SGL60N90DG3TU Real Image
Same model may have multiple batches, images only for reference.

SGL60N90DG3TU

Part No SGL60N90DG3TU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 900V 60A 180W TO264
Datasheet
SGL60N90DG3TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 900V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 60A
Maximum Power Dissipation 180W
Input Type Standard
Gate Charge 260nC
Reverse Recovery Time (trr) 1.5μs
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-264
Win Source Part Number 211598-SGL60N90DG3TU
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SGL60N90DG3TU CAD Model

Description

The Fairchild/ON Semiconductor IGBT transistor SGL60N90DG3TU is a high-voltage, high-current, and high-speed power transistor designed for use in power supplies, motor drives, and other applications.

  • Maximum Collector-Emitter Breakdown Voltage: 900V
  • Maximum Collector Current: 60A
  • Maximum Power Dissipation: 180W
  • IGBT Type: Trench
  • Input Type: Standard
  • Gate Charge: 260nC
  • Reverse Recovery Time: 1.5μs
  • Package: TO-264
  • Mounting: Through Hole
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited
  • Collector-Emitter Saturation Voltage (Max): 2.7V @ 15V, 60A

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