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Same model may have multiple batches, images only for reference.
SGL50N60RUFDTU Real Image
Same model may have multiple batches, images only for reference.

SGL50N60RUFDTU

Part No SGL50N60RUFDTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 80A 250W TO264
Datasheet
SGL50N60RUFDTU Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 50A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 1.68mJ (on), 1.03mJ (off)
Input Type Standard
Gate Charge 145nC
Turn-on and Turn-off delay time 26ns/66ns
Testing Conditions 300V, 50A, 5.9 Ohm, 15V
Reverse Recovery Time (trr) 100ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-264
Win Source Part Number 1095602-SGL50N60RUFDTU
Popularity Medium
Supply and Demand Status Balance
Quantity per package 375
Ultra Librarian 3D Model Ultra Librarian SGL50N60RUFDTU CAD Model

Description

The Fairchild/ON Semiconductor SGL50N60RUFDTU is a through-hole mounted IGBT transistor with a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 80A.

  • Mounting Type: Through-hole
  • Collector-Emitter Breakdown Voltage (Max): 600V
  • Collector Current (Max): 80A
  • Reverse Recovery Time: 100ns
  • Gate Charge: 145nC
  • Case: TO-264
  • Power Dissipation: 250W
  • Turn-On Delay Time: 26ns
  • Turn-Off Delay Time: 66ns
  • Total Switching Energy (On): 1.68mJ
  • Total Switching Energy (Off): 1.03mJ
  • Ideal for: Motor control, power supplies, and inverters

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