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Same model may have multiple batches, images only for reference.
SGF80N60UFTU
Same model may have multiple batches, images only for reference.

SGF80N60UFTU

Part No SGF80N60UFTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 80A 110W TO3PF
Datasheet
SGF80N60UFTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 220A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 40A
Maximum Power Dissipation 110W
Total Switching Energy(Ets) 570μJ (on), 590μJ (off)
Input Type Standard
Gate Charge 175nC
Turn-on and Turn-off delay time 23ns/90ns
Testing Conditions 300V, 40A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PF
Win Source Part Number 042579-SGF80N60UFTU
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SGF80N60UFTU CAD Model

Description

The SGF80N60UFTU is a high-power insulated gate bipolar transistor (IGBT) from Fairchild/ON Semiconductor.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 80A

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21+ $5.6433 $118.5093
32+ $5.4666 $174.9312
44+ $5.2899 $232.7556
57+ $5.1143 $291.5151
76+ $4.5854 $348.4904
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