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NDC631NNL

Part No NDC631NNL
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (M - N)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1081887-NDC631NNL
Categories OEM Parts(M-N)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian NDC631NNL CAD Model

Description

The NDC631NNL is a P-Channel Power MOSFET manufactured by Fairchild Semiconductor (now ON Semiconductor). It's designed for a variety of switching and power management applications, providing efficient and reliable performance. The P-Channel configuration means it's turned on by applying a negative voltage to the gate relative to the source.

Applications:

  • Load Switching
  • Power Management in Portable Devices
  • Battery Protection Circuits
  • DC-DC Converters
  • Power Distribution

Features:

  • P-Channel MOSFET
  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction.
  • Low Gate Charge (Qg): Reduces switching losses.
  • High Drain-Source Voltage (VDS): Suitable for a range of input voltages.
  • Avalanche Rated: Can withstand transient voltage spikes.
  • Surface Mount Package (typically SO-8 or similar): Enables efficient board assembly.

Benefits:

  • High Efficiency: Low RDS(on) minimizes power dissipation.
  • Fast Switching: Low gate charge allows for rapid switching speeds.
  • Compact Size: Surface mount package saves board space.
  • Reliable Performance: Robust design ensures long-term reliability.
  • Easy to Use: P-Channel configuration simplifies drive circuitry in some applications.

Additional Details:

The NDC631NNL's key specifications include its drain-source voltage rating (VDS), gate-source voltage rating (VGS), continuous drain current (ID), and on-resistance (RDS(on)). The RDS(on) value is typically specified at a particular gate-source voltage and drain current. The MOSFET is typically packaged in an SO-8 or similar surface mount package. Proper thermal management is essential to prevent overheating, particularly at higher current levels. The device is typically driven by a microcontroller or dedicated gate driver circuit. The avalanche rating indicates the device's ability to withstand transient voltage spikes without damage. The P-Channel configuration is often used in high-side switching applications. The device is lead-free and RoHS compliant. Applications should consider the specific voltage and current requirements to ensure the MOSFET operates within its safe operating area (SOA). Careful PCB layout is also important to minimize parasitic inductance and capacitance, which can affect switching performance. Datasheets should be consulted for precise electrical characteristics and application guidelines.

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