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HGTP5N120BND

Part No HGTP5N120BND
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 21A 167W TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 21A
Pulsed Collector Current 40A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 5A
Maximum Power Dissipation 167W
Total Switching Energy(Ets) 450μJ (on), 390μJ (off)
Input Type Standard
Gate Charge 53nC
Turn-on and Turn-off delay time 22ns/160ns
Testing Conditions 960V, 5A, 25 Ohm, 15V
Reverse Recovery Time (trr) 65ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 040494-HGTP5N120BND
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian HGTP5N120BND CAD Model

Description

The electronic component with Id 152481 is a discrete semiconductor product manufactured by Fairchild/ON Semiconductor. It has a collector-emitter breakdown voltage of 1200V and a maximum power dissipation of 167W. The supply and demand status is limited, and it comes in a package of 800.

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