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Same model may have multiple batches, images only for reference.
HGTP12N60C3D Real Image
Same model may have multiple batches, images only for reference.

HGTP12N60C3D

Part No HGTP12N60C3D
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 24A 104W TO220AB
Datasheet
HGTP12N60C3D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 24A
Pulsed Collector Current 96A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 15A
Maximum Power Dissipation 104W
Total Switching Energy(Ets) 380μJ (on), 900μJ (off)
Input Type Standard
Gate Charge 48nC
Reverse Recovery Time (trr) 40ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 1043309-HGTP12N60C3D
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian HGTP12N60C3D CAD Model

Description

The HGTP12N60C3D is a high voltage IGBT designed for high efficiency applications such as power factor correction, solar inverters, and motor drives.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 24A
  • Collector-Emitter Saturation Voltage: 2.2V @ 15V and 15A
  • Reverse Recovery Time: 40ns
  • Gate Charge: 48nC
  • Package: TO-220AB
  • Operating Temperature: -40°C to 150°C

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Quantity Unit Price Ext. Price
12+ $4.1785 $50.1420
30+ $3.4286 $102.8580
46+ $3.3214 $152.7844
63+ $3.2143 $202.5009
81+ $3.1071 $251.6751
108+ $2.7857 $300.8556
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