The Fairchild/ON Semiconductor HGTG30N60C3D is a through-hole IGBT with a maximum collector current of 63A and a collector-emitter breakdown voltage of 600V. It has a gate charge of 162nC and a reverse recovery time of 60ns. With a maximum power dissipation of 208W and a pulsed collector current of 252A, this IGBT is suitable for various applications. It has a collector-emitter saturation voltage of 1.8V @ 15V, 30A and a total switching energy of 1.05mJ (on), 2.5mJ (off). This IGBT is not for new designs and has a temperature range of -40°C to 150°C (TJ). It is packaged in a TO-247 case and has a medium popularity. It comes in a package of 450.