The FQPF12N60CG is a N-Channel MOSFET from Fairchild Semiconductor (now ON Semiconductor). It is designed for high voltage, high-speed power switching applications. This MOSFET is part of the QFET® family, which utilizes advanced planar stripe and DMOS technology to minimize on-state resistance and provide superior switching performance.

Applications

• Power supplies
• PWM motor controls
• High-efficiency DC-DC converters
• Uninterruptible Power Supplies (UPS)
• Lighting ballast

Features

• Low on-resistance (RDS(on))
• High voltage capability (600V)
• Fast switching speed
• Low gate charge
• Avalanche ruggedness
• Improved dv/dt capability

Benefits

• Improved energy efficiency due to low RDS(on)
• Reduced power dissipation, leading to cooler operation
• Enhanced system reliability due to rugged design
• Simplified thermal management
• Higher switching frequencies, enabling smaller and lighter designs

Additional Details

The FQPF12N60CG is an N-Channel enhancement mode MOSFET. It has a drain-source voltage (VDS) rating of 600V and a continuous drain current (ID) of 12A. The on-resistance (RDS(on)) is typically 0.75 ohms at VGS = 10V. The gate charge (Qg) is typically 23 nC. It is available in a TO-220F package, which provides excellent thermal performance. The device is designed to withstand high energy in avalanche and commutation modes. The fast intrinsic diode minimizes losses and switching times. The 'CG' suffix indicates that it is a Green product, meaning it is RoHS compliant and free from halogen.