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FQP10N80C

Part No FQP10N80C
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1059693-FQP10N80C
Categories OEM Parts(F-I)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FQP10N80C CAD Model

Description

The FQP10N80C is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor, designed for high-voltage and high-speed switching applications. This MOSFET is commonly used in power supplies, motor controls, and other power electronic circuits. It features a low on-resistance and fast switching characteristics, enabling efficient power conversion and control.

Applications

  • Switching Power Supplies (SMPS): Used as a switching element in power supplies for efficient power conversion.
  • Motor Control: Employed in motor control circuits for controlling motor speed and torque.
  • DC-DC Converters: Utilized in DC-DC converters to regulate voltage levels.
  • Lighting Ballasts: Used in electronic ballasts for efficient lighting control.
  • Uninterruptible Power Supplies (UPS): Provides backup power during power outages.

Features

  • Low On-Resistance (RDS(on)): Minimizes power losses and improves efficiency.
  • High Voltage Capability: Suitable for high-voltage applications.
  • Fast Switching Speed: Enables high-frequency operation.
  • Avalanche Rated: Withstands voltage spikes and transients.
  • RoHS Compliant: Environmentally friendly and compliant with RoHS standards.

Benefits

  • High Efficiency: Reduces power consumption and heat generation.
  • Improved System Performance: Enables faster switching and higher operating frequencies.
  • Enhanced Reliability: Ensures stable operation under various operating conditions.
  • Reduced System Cost: Smaller component sizes and simplified designs contribute to cost savings.
  • Environmentally Friendly: Compliant with environmental regulations.

Technical Specifications

  • Drain-Source Voltage (VDSS): 800V
  • Gate-Source Voltage (VGSS): ±30V
  • Continuous Drain Current (ID): 10A
  • Pulsed Drain Current (IDM): 30A
  • On-Resistance (RDS(on)): 1.2 Ohms (typical)
  • Gate Charge (Qg): 20 nC (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

The FQP10N80C MOSFET is a reliable and efficient component commonly used in various power electronics applications. Its high voltage capability and fast switching speed make it an excellent choice for designs requiring high performance and efficiency. The TO-220 package provides adequate heat dissipation for the specified current levels, making it a robust component for many industrial and consumer electronic products.

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