The FQI9N30 is an N-Channel MOSFET from Fairchild Semiconductor (now ON Semiconductor). It is designed for high voltage, high-speed power switching applications. This MOSFET is part of the QFET® family, known for its advanced planar stripe and DMOS technology, which minimizes on-state resistance while providing superior switching performance.

Applications

• Power supplies
• PWM motor controls
• DC-DC converters
• Uninterruptible Power Supplies (UPS)
• Lighting ballasts

Features

• Low on-resistance (RDS(on))
• High voltage capability (300V)
• Fast switching speed
• Low gate charge
• Avalanche ruggedness
• Improved dv/dt capability

Benefits

• Improved energy efficiency because of the low RDS(on)
• Reduced power dissipation, leading to cooler operation
• Enhanced system reliability due to its rugged design
• Simplified thermal management
• Higher switching frequencies for smaller and lighter designs

Additional Details

The FQI9N30 is an N-Channel enhancement mode MOSFET. It features a drain-source voltage (VDS) rating of 300V and a continuous drain current (ID) of 9A. The on-resistance (RDS(on)) is typically 0.48 ohms at VGS = 10V. The gate charge (Qg) is typically 15 nC. It comes in a TO-220F package, ensuring efficient thermal performance. The device is designed to withstand high energy in avalanche and commutation modes. The fast intrinsic diode minimizes losses and switching times.