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FQB8N60TM

Part No FQB8N60TM
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1059661-FQB8N60TM
Categories OEM Parts(F-I)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FQB8N60TM CAD Model

Description

The FQB8N60TM is a N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It is designed for high-voltage, high-speed switching applications such as power supplies, PWM motor controls, and DC-DC converters. This MOSFET features a low on-resistance, which minimizes power loss and improves efficiency. Its robust design ensures reliable performance in demanding environments.

Applications

  • Switching power supplies: Used as a switching element to efficiently convert AC to DC.
  • PWM motor controls: Controls the speed and torque of electric motors.
  • DC-DC converters: Essential component in stepping up or stepping down voltage levels.
  • Uninterruptible power supplies (UPS): Provides backup power during power outages.
  • Lighting ballasts: Used in electronic ballasts for fluorescent and LED lighting.

Features

  • Low on-resistance (RDS(on)): Minimizes power loss and increases efficiency.
  • High voltage capability: Suitable for high-voltage applications.
  • Fast switching speed: Allows for high-frequency operation.
  • Avalanche rated: Withstands voltage spikes and transients.
  • RoHS compliant: Environmentally friendly.

Benefits

  • Improved efficiency: Reduces energy consumption in power supplies and converters.
  • Enhanced circuit protection: Safeguards against voltage spikes and overcurrent issues.
  • Smaller heat sink requirements: Low RDS(on) reduces heat generation.
  • Extended lifespan: Ensures long-term reliability in demanding applications.
  • Environmentally friendly: Complies with RoHS standards.

Technical Specifications

  • Drain-Source Voltage (VDSS): 600V
  • Gate-Source Voltage (VGSS): ±30V
  • Continuous Drain Current (ID): 8A
  • Pulsed Drain Current (IDM): 24A
  • On-Resistance (RDS(on)): 0.85 Ohms (typical)
  • Gate Charge (Qg): 15 nC (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

The FQB8N60TM is a reliable and efficient MOSFET commonly used in a variety of power electronics applications. Its low on-resistance and high voltage capability make it an excellent choice for designs requiring high performance and efficiency. The TO-220 package provides adequate heat dissipation for the specified current levels, making it a robust component for many industrial and consumer electronic products.

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