The FGPF46N33 is a discrete IGBT (Insulated Gate Bipolar Transistor) from Fairchild Semiconductor (now ON Semiconductor). It is designed for high-voltage, high-current switching applications, offering a robust solution for power control and conversion.

Applications

• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC) circuits
• Induction heating
• Welding equipment
• Motor control drives

Features

• High input impedance, simplifying drive requirements
• Low saturation voltage, minimizing conduction losses
• High switching speed, enabling efficient operation
• Temperature compensated behavior
• RoHS compliant

Benefits

• Improved energy efficiency due to lower conduction and switching losses.
• Reduced system size and cost due to simplified drive circuitry and efficient thermal management.
• Enhanced system reliability through robust design and temperature compensated performance.
• Compliance with environmental regulations.

Detailed Specifications

The FGPF46N33 features a collector-emitter voltage (V_CES) rating of 330V and a continuous collector current (I_C) rating of 46A. The gate-emitter voltage (V_GE) is rated at +/- 20V. The maximum power dissipation (P_D) is rated at 180W. The device has a typical turn-on time of 40 ns and a turn-off time of 80 ns. It is packaged in a TO-220F package, offering good thermal performance. The saturation voltage (V_CE(sat)) is typically 1.6V at I_C = 46A and V_GE = 15V. This IGBT is specifically designed for applications requiring high efficiency and reliability at moderate switching frequencies.

The integrated diode in the FGPF46N33 offers soft-recovery characteristics, further reducing switching losses and improving overall system performance. The device's robust design ensures reliable operation in demanding industrial environments.