The Fairchild/ON Semiconductor FGH80N60FD2TU is a Field Stop IGBT transistor with a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 80A. It has a TO-247 package and can operate at a temperature range between -55°C to 150°C. The transistor has a reverse recovery time of 61ns and a gate charge of 120nC. It also has a low collector-emitter saturation voltage of 2.4V at 15V and 40A.

• The FGH80N60FD2TU has a total switching energy of 1mJ (on) and 520μJ (off) and a turn-on and turn-off delay time of 21ns/126ns.
• This transistor is ideal for use in high-power applications such as motor drives, power supplies, and inverters.
• It is available in a tube/rail packaging with a quantity of 450 per package.