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Same model may have multiple batches, images only for reference.
FGH30T65UPDT Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FGH30T65UPDT

Part No FGH30T65UPDT
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 650V 60A 250W TO247-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 650V
Maximum Current Collector 60A
Pulsed Collector Current 90A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 30A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 760μJ (on), 400μJ (off)
Input Type Standard
Gate Charge 155nC
Turn-on and Turn-off delay time 22ns/139ns
Testing Conditions 400V, 30A, 8 Ohm, 15V
Reverse Recovery Time (trr) 43ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 Long Leads
Win Source Part Number 204177-FGH30T65UPDT
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FGH30T65UPDT CAD Model

Description

The Fairchild/ON Semiconductor FGH30T65UPDT is a high-performance IGBT transistor.

  • Maximum Collector-Emitter Breakdown Voltage: 650V
  • Maximum Collector Current: 60A
  • Package: TO-247 (Long Leads)
  • Mounting: Through-Hole
  • IGBT Type: Trench Field Stop
  • Gate Charge: 155nC
  • Reverse Recovery Time: 43ns
  • Collector-Emitter Saturation Voltage: 2.3V @ 15V, 30A
  • Total Switching Energy: 760μJ (on), 400μJ (off)
  • Turn-On/Turn-Off Delay Times: 22ns / 139ns

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77+ $3.0099 $231.7623
100+ $2.9106 $291.0600
133+ $2.6091 $347.0103
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