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Same model may have multiple batches, images only for reference.
FGH25N120FTDS Real Image
Same model may have multiple batches, images only for reference.

FGH25N120FTDS

Part No FGH25N120FTDS
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 50A 313W TO247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 50A
Pulsed Collector Current 75A
Collector-emitter saturation voltage(Max) 2V @ 15V, 25A
Maximum Power Dissipation 313W
Total Switching Energy(Ets) 1.42mJ (on), 1.16mJ (off)
Input Type Standard
Gate Charge 169nC
Turn-on and Turn-off delay time 26ns/151ns
Testing Conditions 600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr) 535ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 204174-FGH25N120FTDS
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FGH25N120FTDS CAD Model

Description

The Fairchild/ON Semiconductor IGBT is a high-performance transistor designed for use in a variety of electronic applications.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 50A
  • Maximum Power Dissipation: 313W
  • Package: TO-247
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Reverse Recovery Time: 535ns
  • Gate Charge: 169nC

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