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Same model may have multiple batches, images only for reference.
FGA40T65UQDF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FGA40T65UQDF

Part No FGA40T65UQDF
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTO / IGBT NPT 650 V 80 A 231 W Through Hole TO-3PN
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Fairchild Semiconductor
Package Bulk
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 1.67V @ 15V, 40A
Power - Max 231 W
Switching Energy 989µJ (on), 310µJ (off)
Input Type Standard
Gate Charge 306 nC
Td (on/off) @ 25°C 32ns/271ns
Test Condition 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 89 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
ECCN EAR99
HTSUS 8542.39.0001
Other Names ONSFSCFGA40T65UQDF,2156-FGA40T65UQDF
Standard Package 1
Win Source Part Number 1003359-FGA40T65UQDF
Ultra Librarian 3D Model Ultra Librarian FGA40T65UQDF CAD Model

Description

The FGA40T65UQDF is a single IGBT transistor. FGA40T65UQDF is manufactured by Fairchild Semiconductor.

  • Power Rating: 231 W (Max)
  • Reverse Recovery Time: 89 ns
  • IGBT Type: NPT
  • Voltage Collector Emitter Breakdown: 650 V
  • Current Collector Maximum: 80 A
  • Current Collector Pulsed: 120 A
  • Switching Energy (on): 989μJ
  • Switching Energy (off): 310μJ
  • Input Type: Standard
  • Gate Charge: 306 nC
  • Td (on/off) @ 25°C: 32ns/271ns

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