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Same model may have multiple batches, images only for reference.
FGA25N120FTD Real Image
Same model may have multiple batches, images only for reference.

FGA25N120FTD

Part No FGA25N120FTD
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 50A 313W TO3P
Datasheet
FGA25N120FTD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 50A
Pulsed Collector Current 75A
Collector-emitter saturation voltage(Max) 2V @ 15V, 25A
Maximum Power Dissipation 313W
Total Switching Energy(Ets) 340μJ (on), 900μJ (off)
Input Type Standard
Gate Charge 160nC
Turn-on and Turn-off delay time 48ns/210ns
Testing Conditions 600V, 25A, 15 Ohm, 15V
Reverse Recovery Time (trr) 770ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Win Source Part Number 1038635-FGA25N120FTD
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FGA25N120FTD CAD Model

Description

The Fairchild/ON Semiconductor FGA25N120FTD is a through-hole IGBT transistor.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 50A
  • Reverse Recovery Time (trr): 770ns
  • IGBT Type: Trench Field Stop
  • Gate Charge: 160nC
  • Maximum Power Dissipation: 313W
  • Pulsed Collector Current: 75A
  • Collector-Emitter Saturation Voltage (max): 2V @ 15V, 25A
  • Total Switching Energy (Ets): 340μJ (on), 900μJ (off)
  • Turn-On and Turn-Off Delay Time: 48ns/210ns
  • Testing Conditions: 600V, 25A, 15 Ohm, 15V
  • Package: TO-3PN
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium

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