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Same model may have multiple batches, images only for reference.
FGA15N120ANTDTU_F109 Real Image
Same model may have multiple batches, images only for reference.

FGA15N120ANTDTU_F109

Part No FGA15N120ANTDTU_F109
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 30A 186W TO3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type NPT and Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 30A
Pulsed Collector Current 45A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 15A
Maximum Power Dissipation 186W
Total Switching Energy(Ets) 3mJ (on), 600μJ (off)
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 15ns/160ns
Testing Conditions 600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr) 330ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 001159-FGA15N120ANTDTU_F109
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FGA15N120ANTDTU_F109 CAD Model

Description

The Fairchild/ON Semiconductor FGA15N120ANTDTU_F109 is a through-hole IGBT transistor designed for use in discrete semiconductor products.

  • Maximum Current Collector: 30A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Reverse Recovery Time: 330ns
  • Total Switching Energy: 3mJ (on), 600μJ (off)
  • Turn-On/Turn-Off Delay Time: 15ns / 160ns
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V, 15A
  • Gate Charge: 120nC
  • Maximum Power Dissipation: 186W
  • Package: TO-3P
  • Limited supply and demand status

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