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FDS6892AZ-NL

Part No FDS6892AZ-NL
Manufacturer Fairchild/ON Semiconductor
Catalog Miscellaneous
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Categories Uncategorized
Manufacturer Fairchild/ON Semiconductor
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 823267-FDS6892AZ-NL
Ultra Librarian 3D Model Ultra Librarian FDS6892AZ-NL CAD Model

Description

The FDS6892AZ-NL is a dual N-Channel PowerTrench® MOSFET designed for space-constrained applications requiring efficient power management. This device integrates two MOSFETs in a single package, minimizing board space while providing excellent electrical performance. It is optimized for low voltage, low RDS(on) operation, making it suitable for load switching and power management in portable devices.

Applications:

  • Load switching in portable devices
  • Power management in smartphones and tablets
  • Battery protection circuits
  • DC-DC converters
  • Power distribution

Features:

  • Dual N-Channel MOSFETs in a single package
  • Low on-resistance (RDS(on))
  • Fast switching speed
  • Low gate charge (Qg)
  • Small footprint MLP 3.3x3.3 package
  • RoHS compliant

Benefits:

  • Reduced board space requirements due to dual MOSFET integration, enabling smaller and more compact designs.
  • Improved power efficiency due to low RDS(on), minimizing power losses and heat dissipation.
  • Enhanced switching performance, allowing for higher frequency operation and faster response times.
  • Simplified circuit design due to integrated functionality, reducing component count and assembly costs.
  • Compliance with environmental regulations, ensuring environmentally friendly product development.

Additional Details:

The FDS6892AZ-NL features a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 4.5A per channel. The typical RDS(on) is very low, contributing to its high efficiency. The small MLP 3.3x3.3 package offers excellent thermal performance. It is designed to operate over a wide temperature range. The device's low gate charge and fast switching times make it suitable for high-frequency DC-DC converters. The dual configuration provides flexibility in circuit design, allowing for independent control of each MOSFET.

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