The MMBT2222A-7-04-F from Diodes Incorporated is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor is well-suited for switching and amplification purposes thanks to its fast switching speeds and high current gain.

Key Features

• Device Type: NPN Bipolar Junction Transistor (BJT)
• Configuration: Single
• Collector-Emitter Voltage (VCEO): 40V
• Collector-Base Voltage (VCBO): 75V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current - Continuous (IC): 600mA
• Power Dissipation (Pd): 350mW
• DC Current Gain (hFE): 100 to 300 at 10mA, 10V
• Transition Frequency (fT): 300MHz
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23-3

Applications

The MMBT2222A-7-04-F is ideal for a variety of applications including, but not limited to:

• Linear amplification and switching
• Signal processing
• Power management
• Consumer electronics
• Telecommunications
• Computing devices

Quality and Reliability

Diodes Incorporated is known for their commitment to quality and reliability. The MMBT2222A-7-04-F is manufactured to meet the highest industry standards, ensuring stable performance across a wide range of environmental conditions. This product is RoHS compliant and is designed to meet or exceed the requirements of the electronic industry's stringent standards for performance and reliability.

Environmental Compliance

The MMBT2222A-7-04-F transistor is environmentally friendly and compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from harmful substances such as lead, mercury, and cadmium.