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FMMT4126TA

Part No FMMT4126TA
Manufacturer Diodes Incorporated
Catalog RF Transistors (BJT)
Description Trans Sw PNP -25V -200MA SOT23-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-23
Collector Base Voltage (VCBO) 25 V
Collector Emitter Breakdown Voltage 40 V
Collector Emitter Voltage (VCEO) 750 mV
Current Rating -200 mA
Element Configuration Single
Emitter Base Voltage (VEBO) 4 V
Gain Bandwidth Product 250 MHz
Height 1 mm
Lead Free Contains Lead
Length 3.05 mm
Max Breakdown Voltage 40 V
Max Collector Current 600 mA
Maximum Operating Temperature 150 °C
Max Power Dissipation 330 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Packaging Tape & Reel (TR)
Polarity PNP
RoHS Compliant
Transition Frequency 200 MHz
Voltage Rating (DC) -25 V
Weight 200.998119 mg
Width 1.4 mm
Win Source Part Number 1059454-FMMT4126TA
Categories RF Transistors(BJT)
Manufacturer Diodes Incorporated
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FMMT4126TA CAD Model

Description

Introducing the FMMT4126TA PNP Transistor by Diodes Incorporated

The FMMT4126TA is a high-performance PNP bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This transistor is part of their extensive range of transistor products, tailored for various electronic applications.

With its small surface-mounted SOT-23 package, the FMMT4126TA is ideal for space-constrained applications, offering a compact solution without compromising on power and performance. This makes it suitable for a wide range of uses, including signal processing, power management, and amplification tasks in both commercial and industrial electronic devices.

Key Features of the FMMT4126TA

  • Device Type: PNP Bipolar Junction Transistor
  • Package Type: SOT-23, a small footprint surface-mount package
  • Collector-Emitter Voltage (Vceo): 80V, providing a good margin for voltage headroom in circuits.
  • Collector Current (Ic): 500mA, suitable for moderate power applications.
  • Power Dissipation (Pd): 625mW, ensuring adequate power handling capability.
  • DC Current Gain (hFE): High hFE value, which indicates efficient current amplification.
  • Transition Frequency (fT): High-frequency performance for RF and fast-switching applications.
  • Operating and Storage Junction Temperature Range: From -55°C to +150°C, which ensures stability and reliability across a wide range of environmental conditions.

The FMMT4126TA transistor is not just about power and performance; it is also designed with reliability in mind. Its robust construction and the ability to withstand challenging environmental conditions make it a dependable choice for your circuit designs. Whether you're working on audio amplifiers, switch-mode power supplies, or any other application requiring a reliable PNP transistor, the FMMT4126TA is an excellent choice.

Diodes Incorporated's commitment to quality means that each FMMT4126TA transistor meets stringent standards, ensuring consistent performance and longevity. Choose the FMMT4126TA for your next project and experience the perfect blend of compactness, efficiency, and reliability.

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