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DMT6015LPS-13

Part No DMT6015LPS-13
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET BVDSS: 41V 60V POWERDI506 / 60V N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 10.6A , 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 16mOhm at 10A, 10V
Vgs(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 18.9nC at 10V
Maximum Vgs ±16V
Input Capacitance (Ciss) (Maximum) at Vds 1103pF at 30V
Power Dissipation (Maximum) 1.16W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerDI5060-8
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 802896-DMT6015LPS-13
Ultra Librarian 3D Model Ultra Librarian DMT6015LPS-13 CAD Model

Description

DMT6015LPS-13 - A High-Efficiency, Low-Power MOSFET

The DMT6015LPS-13 is a state-of-the-art power MOSFET from Diodes Incorporated, designed to deliver both high efficiency and low power dissipation. This device is a testament to Diodes Incorporated's commitment to providing advanced solutions for energy-sensitive applications. With its compact footprint and robust performance, the DMT6015LPS-13 is an ideal choice for a wide range of power management tasks.

Constructed using advanced trench technology, the DMT6015LPS-13 boasts a low on-resistance (RDS(on)) which significantly reduces conduction losses. This feature is particularly beneficial in applications that demand high efficiency, such as power supplies, DC-DC converters, and motor drives. The MOSFET's low threshold voltage ensures that it can be driven at lower gate voltages, making it compatible with a variety of control circuits and further enhancing its versatility.

The DMT6015LPS-13 operates at a maximum continuous drain current of 4.2A, and it can handle pulsed drain currents up to 16.8A. This capability makes it suitable for high-current applications while maintaining a low thermal footprint. Moreover, the device is characterized by a fast switching performance, which contributes to reduced switching losses and improved overall system efficiency.

Encased in a PowerDI5060-8 package, the DMT6015LPS-13 is not only robust but also space-efficient, allowing for high-density PCB layouts. This packaging is designed to enhance thermal performance and ensure long-term reliability, even under challenging operating conditions. The MOSFET also features a maximum junction temperature of 150°C, providing a wide operating temperature range that can accommodate various environmental demands.

In terms of protection, the DMT6015LPS-13 is equipped with built-in features that safeguard the device against overcurrent and overtemperature conditions. These protective measures contribute to the longevity of the product and the safety of the end application.

Whether you are designing power management systems for consumer electronics, industrial controls, or automotive applications, the DMT6015LPS-13 from Diodes Incorporated is a versatile and reliable component that can help you achieve high efficiency with minimal power loss.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7718 $50.1670
160+ $0.6333 $101.3280
245+ $0.6135 $150.3075
340+ $0.5937 $201.8580
440+ $0.5740 $252.5600
585+ $0.5146 $301.0410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,512 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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