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DMT10H010LSS-13

Part No DMT10H010LSS-13
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CH 100V SO-8 / 100V N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 11.5A , 29.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 9.5mOhm at 13A, 10V
Vgs(th) (Maximum) at Id 2.8V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 71nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3000pF at 50V
Power Dissipation (Maximum) 1.4W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 801712-DMT10H010LSS-13
Ultra Librarian 3D Model Ultra Librarian DMT10H010LSS-13 CAD Model

Description

Introducing the DMT10H010LSS-13 MOSFET from Diodes Incorporated

The DMT10H010LSS-13 is a state-of-the-art silicon-based, N-channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This compact and efficient power MOSFET is designed to meet the rigorous requirements of modern electronic devices, offering a perfect blend of low on-resistance and high switching speeds.

Key Features

  • Low On-Resistance: The DMT10H010LSS-13 features exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal losses and better performance in power conversion systems.
  • Power Dissipation: It boasts an impressive power dissipation characteristic, ensuring that the device can handle significant power levels while maintaining its structural integrity and performance.
  • SOT-23 Package: Enclosed in a small SOT-23 package, the DMT10H010LSS-13 is perfect for space-constrained applications, providing a compact solution without compromising on power and efficiency.
  • High Reliability: Designed with robustness in mind, this MOSFET is built to deliver consistent performance and withstand the stresses of various operating conditions.

Applications

The versatility of the DMT10H010LSS-13 makes it suitable for a wide range of applications, including:

  • Power Management Solutions
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control Circuits
  • Load Switches
  • Portable Devices

Technical Specifications

Some of the notable technical specifications of the DMT10H010LSS-13 include:

  • Drain-Source Voltage (V<sub>DS): 100V
  • Continuous Drain Current (I<sub>D): 760mA
  • Power Dissipation (P<sub>D): 1.4W
  • Gate Threshold Voltage (V<sub>GS(th)): 2.1V
  • Operating Temperature Range: -55°C to +150°C

Whether you're designing power supplies, chargers, or any high-efficiency power electronics, the DMT10H010LSS-13 MOSFET from Diodes Incorporated provides the reliability and performance you need. Invest in this MOSFET for your next project to ensure top-tier electrical characteristics and long-lasting durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8443 $50.6580
145+ $0.6928 $100.4560
225+ $0.6711 $150.9975
310+ $0.6495 $201.3450
400+ $0.6278 $251.1200
535+ $0.5629 $301.1515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,978 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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