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DMP56D0UFB-7B

Part No DMP56D0UFB-7B
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description P-CHANNEL ENHANCEMENT MODE MOSFET | MOSFET P-CH 50V 200MA 3DFN
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 50V
Id - Continuous Drain Current 200mA
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Maximum) at Id, Vgs 6Ohm at 100mA, 4V
Gate Source Voltage(th) (Maximum) at Id 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 0.58nC at 4V
Gate Source Voltage (Maximum) ±8V
Input Capacitance (Ciss) (Maximum) at Vds 50.54pF at 25V
Power Dissipation (Maximum) 425mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 3-DFN1006 (1.0x0.6)
Manufacturer Package 3-UFDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 737923-DMP56D0UFB-7B
Family Name DMP56D0UFB
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMP56D0UFB-7B CAD Model

Description

Product Overview: DMP56D0UFB-7B

The DMP56D0UFB-7B is a high-performance P-channel enhancement mode field-effect transistor (MOSFET) manufactured by Diodes Incorporated, a leading global provider and manufacturer of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and control in a wide range of electronic applications, making it a versatile component for modern electronic design.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, ensuring that it can be easily turned on and controlled with low-voltage logic signals, making it suitable for battery-operated devices and low-power applications.
  • High Power Dissipation: With a power dissipation of 1.25W, the DMP56D0UFB-7B can handle significant power, contributing to its robust performance in demanding situations.
  • Advanced Packaging: This MOSFET comes in an ultra-small DFN2020 package, which not only saves space on the PCB but also provides excellent thermal performance and reduced parasitic inductance.
  • High Continuous Drain Current: It supports a continuous drain current of up to 4.2A, allowing for the efficient handling of high current flows without performance degradation.

Applications

The DMP56D0UFB-7B is ideal for a variety of applications where efficient power conversion and control are essential. Common applications include:

  • Power management circuits
  • Battery-powered devices
  • Load switches
  • DC-DC converters
  • Portable electronics
  • Energy-efficient power supplies

Quality and Reliability

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The DMP56D0UFB-7B is no exception, as it is built with the company's rigorous manufacturing processes and thorough testing protocols to ensure it performs consistently across various conditions.

In conclusion, the DMP56D0UFB-7B from Diodes Incorporated is an excellent choice for designers looking for a P-channel MOSFET that offers a balance of power efficiency, compact packaging, and reliable performance. Whether for portable electronics or industrial power systems, this component is engineered to enhance the functionality and efficiency of your electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
475+ $0.1056 $50.1600
1,155+ $0.0866 $100.0230
1,790+ $0.0839 $150.1810
2,465+ $0.0812 $200.1580
3,185+ $0.0785 $250.0225
4,265+ $0.0704 $300.2560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 108,847 pieces
MOQ: 475 pcs
Order Increment : 1 pcs
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