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DMP3021SFVWQ-7

Part No DMP3021SFVWQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9.8A PWRDI3333-8  /  P-Channel 30 V 11A (Ta), 42A (Tc) 1W (Ta) Surface Mount PowerDI3333-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1799 pF @ 15 V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 31-DMP3021SFVWQ-7TR,M4102957
Standard Package 2,000
Win Source Part Number 1009682-DMP3021SFVWQ-7
Ultra Librarian 3D Model Ultra Librarian DMP3021SFVWQ-7 CAD Model

Description

Introducing the DMP3021SFVWQ-7 P-Channel MOSFET by Diodes Incorporated

The DMP3021SFVWQ-7 is a high-performance P-Channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power management and control in a wide array of electronic applications. Its compact form factor and robust design make it an ideal choice for engineers and designers looking to enhance their systems with reliable and efficient power control solutions.

Constructed with advanced trench technology, the DMP3021SFVWQ-7 achieves low on-resistance and a high charge balance, which ensures minimal power loss and heat generation during operation. This feature is particularly beneficial in applications where energy efficiency is paramount. The device operates at a drain-source voltage (V_DS) of -20V, with a continuous drain current (I_D) of -6.5A, making it suitable for handling moderate power requirements in electronic circuits.

The DMP3021SFVWQ-7 is housed in a compact TSOT-26 package, which not only saves valuable board space but also enhances thermal performance due to its power dissipation capabilities. This small footprint does not compromise the MOSFET's performance and is an excellent choice for space-constrained applications.

With a low threshold voltage (V_GS(th)) and fast switching speed, this MOSFET can be easily driven in various configurations, providing design flexibility. It is also characterized by its ruggedness, with a high forward body diode ruggedness, which is crucial for applications that may experience unexpected voltage spikes or surges.

Applications that can benefit from the DMP3021SFVWQ-7 include power management systems, load switches, battery management, and other power-related functions in consumer electronics, telecommunications, computing devices, and industrial equipment. Its reliability and efficiency make it a go-to component for designers looking to optimize their power circuit designs.

Overall, the DMP3021SFVWQ-7 from Diodes Incorporated stands out as a high-quality, reliable P-Channel MOSFET that offers excellent performance in a wide range of applications, ensuring both energy savings and space efficiency in modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0129 $50.6450
125+ $0.8311 $103.8875
190+ $0.8051 $152.9690
260+ $0.7792 $202.5920
335+ $0.7532 $252.3220
445+ $0.6753 $300.5085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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