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DMP1100UCB4-7

Part No DMP1100UCB4-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET P-CHA 12V 2.5A WLB0808 / Qualified to AEC-Q101 Standards for High Reliability
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) at 25°C 2.5A
Drive Voltage (Max Rds On, Min Rds On) 1.3V, 4.5V
Rds On (Maximum) at Id, Vgs 83mOhm at 3A, 4.5V
Vgs(th) (Maximum) at Id 800mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 4.5V
Maximum Vgs ±8V
Input Capacitance (Ciss) (Maximum) at Vds 820pF at 6V
Power Dissipation (Maximum) 670mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package X2-WLB0808-4
Manufacturer Package 4-UFBGA, WLBGA
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803163-DMP1100UCB4-7
Ultra Librarian 3D Model Ultra Librarian DMP1100UCB4-7 CAD Model

Description

Introducing the DMP1100UCB4-7 P-Channel MOSFET from Diodes Incorporated

The DMP1100UCB4-7 is a high-performance P-Channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power management and control in a wide range of applications. Thanks to its compact footprint and low on-resistance, the DMP1100UCB4-7 is an excellent choice for space-constrained and power-sensitive designs.

Featuring a -20V drain-source breakdown voltage (Vds) and a -1.25A continuous drain current (Id), this MOSFET is capable of handling moderate power levels, making it suitable for a variety of switching applications. Its low threshold voltage ensures that it can be easily driven by logic-level voltages, simplifying the interface with microcontrollers and other logic devices.

The DMP1100UCB4-7 comes in an ultra-compact DFN1006-3 (SOT883) package, which not only saves valuable board space but also provides excellent thermal performance. Its small size does not compromise its robustness, as it is designed to sustain a high continuous current and handle high peak currents without overheating.

With a low gate charge (Qg) and fast switching speed, this MOSFET is optimized for high-efficiency power management. It is particularly well-suited for load switch applications, power management in portable devices, and other battery-operated systems where power efficiency is crucial. The DMP1100UCB4-7 is also a reliable component for DC-DC converters, power amplifiers, and other circuits that require a high-performance P-Channel MOSFET.

Diodes Incorporated ensures that the DMP1100UCB4-7 is manufactured with high-quality materials and subjected to rigorous testing, providing designers with confidence in its performance and durability. Whether you're developing consumer electronics, wearable devices, or IoT products, the DMP1100UCB4-7 is an excellent choice for your power management needs.

Choose the DMP1100UCB4-7 for its efficiency, reliability, and the quality assurance of Diodes Incorporated, and take your product design to the next level with this advanced semiconductor solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1416 $50.2680
865+ $0.1162 $100.5130
1,335+ $0.1126 $150.3210
1,840+ $0.1089 $200.3760
2,375+ $0.1053 $250.0875
3,180+ $0.0944 $300.1920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 990,000 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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