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DMN6066SSD

Part No DMN6066SSD
Manufacturer Diodes Incorporated
Catalog END - OF - LIFE
Description 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Rohs State rohs
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Manufacturer Diodes Incorporated
Win Source Part Number 1168206-DMN6066SSD
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian DMN6066SSD CAD Model

Description

Introducing the DMN6066SSD N-Channel MOSFET by Diodes Incorporated

The DMN6066SSD is a high-performance N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and signal amplification in a wide range of applications.

With its advanced technology, the DMN6066SSD offers a drain-source voltage (VDS) of 60V, which makes it suitable for high-voltage operations. The continuous drain current (ID) is rated at 46A at 25°C, ensuring that the device can handle substantial current loads without overheating or failing. This capability is critical for applications requiring reliable power handling, such as power supplies, motor controls, and lighting systems.

The device features a low on-resistance (RDS(on)) of just 6.5mΩ at a gate-source voltage (VGS) of 10V. This low resistance minimizes power loss due to heating, thereby increasing the efficiency of the overall system. The DMN6066SSD is also characterized by its fast switching speed, which is essential for high-frequency applications and helps to reduce switching losses.

Encased in a robust, surface-mount SO-8 package, the DMN6066SSD is designed to be compact and durable, with a small footprint that is ideal for space-constrained applications. The package is also RoHS compliant, ensuring that it meets current environmental standards by avoiding the use of hazardous substances.

Furthermore, the DMN6066SSD is equipped with a built-in gate-source ESD protection diode, which provides enhanced protection against electrostatic discharge events, thus improving the reliability and longevity of the device in sensitive electronic equipment.

In summary, the DMN6066SSD N-Channel MOSFET from Diodes Incorporated is a versatile and reliable component that offers high efficiency, low power loss, and fast switching capabilities. It is an excellent choice for designers and engineers looking to improve the performance and reliability of their power management systems.

For detailed specifications and application notes, please refer to the official Diodes Incorporated product datasheet for the DMN6066SSD.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.5440 $60.9840
26+ $4.5495 $118.2870
40+ $4.4075 $176.3000
55+ $4.2654 $234.5970
71+ $4.1234 $292.7614
94+ $3.6960 $347.4240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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