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Same model may have multiple batches, images only for reference.
IPG20N06S2L50AATMA1
Same model may have multiple batches, images only for reference.

IPG20N06S2L50AATMA1

Part No IPG20N06S2L50AATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs Arrays
Description MOSFET 2N-CH 55V 20A 8TDSON
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 50mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 19µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Power - Max 51W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Case / Package 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10
Package Tape & Reel
Supply and Demand Status Normal
Win Source Part Number 1495216-IPG20N06S2L50AATMA1
Ultra Librarian 3D Model Ultra Librarian IPG20N06S2L50AATMA1 CAD Model

Description

N

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