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DMN30H14DLY-13

Part No DMN30H14DLY-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Low Gate Threshold Voltage
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 300V
Current - Continuous Drain (Id) @ 25°C 210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 4nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 96pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 900mW (Ta)
Rds On (Maximum) @ Id, Vgs 14 Ohm @ 300mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package SOT-89
Package TO-243AA
Win Source Part Number 1168166-DMN30H14DLY-13
Manufacturer Homepage www.diodes.com
Family Name DMN30H14DLY
Introduction Date March 07, 2014
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2029
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN30H14DLY-13 CAD Model

Description

Product Overview: DMN30H14DLY-13 Dual N-Channel MOSFET

The DMN30H14DLY-13 is a high-performance, dual N-Channel enhancement mode field effect transistor (MOSFET) from Diodes Incorporated, renowned for its efficient power management and reliability. This component is designed for a wide range of applications, including load switch, power management, and converter circuits in consumer, industrial, and automotive markets.

Key Features

  • Low On-Resistance: The DMN30H14DLY-13 offers exceptionally low on-resistance (R<sub>DS(on)), which translates into reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant amounts of current, making it suitable for high-power applications.
  • Dual N-Channel Configuration: The dual N-Channel configuration allows for compact circuit designs by integrating two independent MOSFETs into a single package, saving space and reducing component count.
  • Low Threshold Voltage: A low gate threshold voltage (V<sub>GS(th)) ensures that the MOSFET can be easily driven on and off with standard logic levels.
  • High-Speed Switching: Optimized for high-speed switching applications, the DMN30H14DLY-13 minimizes switching losses and is ideal for high-frequency power conversion systems.
  • RoHS Compliant: This product complies with the RoHS directive, which restricts the use of certain hazardous substances in electrical and electronic equipment, making it environmentally friendly.

Package and Reliability

The DMN30H14DLY-13 is housed in a compact and robust PowerDI3333-8 package, which is engineered for optimal thermal performance and reliability. Its small form factor is advantageous for space-constrained applications while providing excellent power dissipation capabilities. The package is also designed for low thermal resistance, ensuring the device operates within its specified temperature range even under high current conditions.

Applications

Due to its versatile characteristics, the DMN30H14DLY-13 is suitable for a variety of applications, including:

  • DC/DC converters
  • Power management systems
  • Motor control circuits
  • Battery management systems
  • Load switches
  • Automotive applications

With its exceptional performance and compact design, the DMN30H14DLY-13 from Diodes Incorporated is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4377 $59.0895
325+ $0.3591 $116.7075
500+ $0.3479 $173.9500
690+ $0.3367 $232.3230
890+ $0.3255 $289.6950
1,190+ $0.2918 $347.2420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 108,353 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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