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DMN2250UFB-7B

Part No DMN2250UFB-7B
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description Low On-Resistance | MOSFET N-CH 20V 1.35A 3DFN
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 1.35A
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Maximum) at Id, Vgs 170mOhm at 1A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 3.1nC at 10V
Gate Source Voltage (Maximum) ±8V
Input Capacitance (Ciss) (Maximum) at Vds 94pF at 16V
Power Dissipation (Maximum) 500mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 3-DFN1006 (1.0x0.6)
Manufacturer Package 3-UFDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 730587-DMN2250UFB-7B
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN2250UFB-7B CAD Model

Description

DMN2250UFB-7B - N-Channel Enhancement Mode Field Effect Transistor by Diodes Incorporated

The DMN2250UFB-7B is a high-performance, N-Channel enhancement mode field effect transistor (FET) designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This MOSFET is engineered to deliver efficient power control and switching in a variety of electronic applications. Its compact form factor and low on-resistance make it an ideal choice for space-constrained and power-sensitive designs.

Key Features:

  • Low On-Resistance: The DMN2250UFB-7B offers an exceptionally low on-resistance of typically 68 mΩ at V<sub>GS = 4.5V, which helps to minimize conduction losses and improve overall efficiency in circuit operation.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D) of up to 1.2A, making it suitable for handling moderate power loads.
  • Low Threshold Voltage: With a low threshold voltage (V<sub>GS(th)), this MOSFET can be easily driven at lower gate voltages, which is advantageous for battery-operated devices.
  • Advanced Packaging: The DMN2250UFB-7B is housed in an ultra-small DFN2020-6 (Type B) package, which not only saves space but also ensures good thermal performance.
  • RoHS Compliant: In line with environmental standards, this product is RoHS compliant, reflecting Diodes Incorporated's commitment to reducing the environmental impact of their components.

Applications:

The versatile DMN2250UFB-7B MOSFET is suitable for a broad range of applications, including:

  • Power Management Circuits
  • Load Switches
  • Battery Protection
  • DC-DC Converters
  • Portable Electronic Devices
  • Motor Control Systems

With its impressive electrical characteristics and compact footprint, the DMN2250UFB-7B from Diodes Incorporated is an excellent choice for designers looking to optimize their power management and switching solutions. Its robust design ensures reliable operation even in demanding environments, making it a valuable component in both commercial and industrial electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
800+ $0.0725 $58.0000
1,945+ $0.0595 $115.7275
3,010+ $0.0577 $173.6770
4,145+ $0.0558 $231.2910
5,355+ $0.0540 $289.1700
7,160+ $0.0484 $346.5440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,200 pieces
MOQ: 800 pcs
Order Increment : 1 pcs
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