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DMN10H170SK3Q-13

Part No DMN10H170SK3Q-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 12A TO252 / N-Channel 100 V 12A (Tc) 42W (Tc) Surface Mount TO-252-3
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1167 pF @ 25 V
Power Dissipation (Max) 42W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number DMN10
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names DMN10H170SK3Q-13DICT,DMN10H170SK3Q-13DIDKR,DMN10H170SK3Q-13DITR
Standard Package 2,500
Win Source Part Number 1214428-DMN10H170SK3Q-13
Ultra Librarian 3D Model Ultra Librarian DMN10H170SK3Q-13 CAD Model

Description

Product Overview: DMN10H170SK3Q-13 from Diodes Incorporated

The DMN10H170SK3Q-13 is a high-performance, N-Channel enhancement mode MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This particular MOSFET is a testament to Diodes Incorporated's commitment to delivering energy-efficient, compact, and reliable components for a wide range of electronic applications.

Key Features

  • Low On-Resistance: The DMN10H170SK3Q-13 boasts a low on-resistance (RDS(on)), which translates to reduced conduction losses and improved power efficiency in applications where it is deployed.
  • High Continuous Drain Current: With a high continuous drain current (ID), this MOSFET can handle significant levels of current, making it suitable for high-power applications.
  • High-Speed Switching: The device is optimized for fast switching speeds, which is essential for reducing switching losses and improving performance in power conversion applications.
  • PowerDI5060-8 Package: The MOSFET comes in a compact PowerDI5060-8 package, which is designed for efficient thermal management and space-saving on PCBs.

Applications

The DMN10H170SK3Q-13 is versatile and can be used in a variety of applications, including:

  • Power management circuits
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Load switches

Quality and Reliability

Diodes Incorporated ensures that the DMN10H170SK3Q-13 meets stringent quality standards. The device is characterized by its reliability and longevity, which is critical for designers who require components that perform consistently over time.

Environmental Compliance

The DMN10H170SK3Q-13 is compliant with RoHS standards, reflecting Diodes Incorporated's dedication to environmental responsibility. By using this MOSFET, manufacturers can produce eco-friendly products while adhering to regulatory requirements.

In conclusion, the DMN10H170SK3Q-13 from Diodes Incorporated is an excellent choice for engineers and designers looking for a robust, efficient, and reliable N-Channel MOSFET. Its combination of low on-resistance, high current handling, and fast switching capabilities, packaged in a thermally efficient design, makes it an ideal component for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4691 $51.6010
260+ $0.3850 $100.1000
405+ $0.3729 $151.0245
555+ $0.3609 $200.2995
720+ $0.3489 $251.2080
960+ $0.3128 $300.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 92,532 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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