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DMG6602SVT-7

Part No DMG6602SVT-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V TSOT23-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.4A, 2.8A
Maximum Rds On at Id,Vgs 60 mOhm @ 3.1A, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 400pF @ 15V
Maximum Power Dissipation 840mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSOT-23-6
Win Source Part Number 098349-DMG6602SVT-7
Family Name DMG6602SVT
Introduction Date July 19, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian DMG6602SVT-7 CAD Model

Description

DMG6602SVT-7 MOSFET by Diodes Incorporated

The DMG6602SVT-7 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, tailored to meet the requirements of modern electronic systems.

Constructed using advanced trench technology, the DMG6602SVT-7 offers excellent RDS(on) and low gate charge, making it a highly efficient solution for power switching applications. Its compact footprint and surface-mount design, enclosed in a RoHS-compliant PowerDI3333-8 package, allow for space-saving PCB layouts, crucial for today's miniaturized electronic assemblies.

Key features of the DMG6602SVT-7 include a continuous drain current (ID) of up to 6.5A and a drain-source voltage (VDS) of 30V, which makes it suitable for a wide range of applications, from power management to load switching. The device also boasts a low threshold voltage (VGS(th)), providing improved control in low-voltage scenarios.

The DMG6602SVT-7 is optimized for fast switching, with a fast switching speed that minimizes energy loss during power conversion, which is essential for maintaining efficiency in power supply circuits. This, combined with its low on-resistance, contributes to reduced heat generation and improved overall system reliability.

With its high-density cell design for extremely low RDS(on), the DMG6602SVT-7 is an excellent choice for high-efficiency power management in portable and battery-powered devices, computer peripherals, and other space-constrained applications. Its performance is also well-suited for DC-DC converters, load switches, and power management tasks within industrial, telecommunications, and consumer electronics sectors.

Overall, the DMG6602SVT-7 MOSFET from Diodes Incorporated represents a blend of efficiency, reliability, and miniaturization, making it an integral component for designers looking to optimize their power management strategies in a variety of electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
515+ $0.0975 $50.2125
1,100+ $0.0913 $100.4300
1,705+ $0.0882 $150.3810
2,440+ $0.0820 $200.0800
3,165+ $0.0790 $250.0350
3,955+ $0.0759 $300.1845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 515 pcs
Order Increment : 1 pcs
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