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DMG3420U-7-F

Part No DMG3420U-7-F
Manufacturer Diodes Incorporated
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Diodes Incorporated
Win Source Part Number 252596-DMG3420U-7-F
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMG3420U-7-F CAD Model

Description

Product Overview: DMG3420U-7-F MOSFET from Diodes Incorporated

The DMG3420U-7-F is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This compact and efficient MOSFET is a testament to the company's commitment to providing advanced semiconductor solutions. With its small form factor and robust capabilities, the DMG3420U-7-F is an ideal choice for a variety of electronic applications.

Key Features

  • Low On-Resistance: The DMG3420U-7-F boasts a low on-resistance (R<sub>DS(on)) which enhances its efficiency and reduces power losses during operation. This characteristic is crucial for applications that demand high efficiency and low heat generation.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET enables quick transitions between on and off states, which is essential for high-frequency circuits and power management systems.
  • Low Gate Charge: The device's low gate charge (Q<sub>G) minimizes the energy required to control the transistor, leading to reduced power consumption and improved overall system efficiency.
  • Surface-Mount Package: Encased in a SOT-23 package, the DMG3420U-7-F is suitable for surface-mount technology (SMT), allowing for high-density PCB designs and simplified assembly processes.

Applications

The versatility of the DMG3420U-7-F MOSFET enables it to be used in a wide range of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Powered Devices
  • Motor Drives
  • Load/Power Switching
  • Telecommunications

Product Specifications

The DMG3420U-7-F operates with a drain-source voltage (V<sub>DS) of 20V and a continuous drain current (I<sub>D) of 6.5A, making it capable of handling moderate power levels. The device's thermal characteristics are also noteworthy, with an operating temperature range from -55°C to +150°C, ensuring reliability across various environmental conditions.

Reliability and Quality

Diodes Incorporated is known for its dedication to quality and reliability. The DMG3420U-7-F is no exception, as it meets stringent industry standards and undergoes rigorous testing to ensure optimal performance and longevity. Customers can trust this MOSFET to deliver consistent results in their electronic designs.

For engineers and designers seeking a reliable and efficient N-Channel MOSFET, the DMG3420U-7-F from Diodes Incorporated stands out as a superior choice that combines performance, versatility, and compactness in one package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
530+ $0.0951 $50.4030
1,125+ $0.0891 $100.2375
1,745+ $0.0861 $150.2445
2,500+ $0.0800 $200.0000
3,250+ $0.0770 $250.2500
4,055+ $0.0740 $300.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 183,160 pieces
MOQ: 530 pcs
Order Increment : 1 pcs
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