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DMG1016UDWQ-7

Part No DMG1016UDWQ-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 8V~24V SOT363 T&R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Not For New Designs
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.066A (Ta), 845mA (Ta)
Rds On (Max) @ Id, Vgs 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 736.6nC @ 4.5V, 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 60.67pF @ 10V, 59.76pF @ 16V
Power - Max 330mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Base Product Number DMG1016
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 821803-DMG1016UDWQ-7
Ultra Librarian 3D Model Ultra Librarian DMG1016UDWQ-7 CAD Model

Description

The DMG1016UDWQ-7 is a high-performance, dual N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated. This compact and efficient semiconductor device is tailored for low-power consumption and space-constrained applications. It is an ideal choice for a range of portable electronics, power management systems, and other applications where efficiency and size are critical.

Key Features

  • Low On-Resistance: The DMG1016UDWQ-7 boasts an exceptionally low on-resistance, which reduces conduction losses and improves overall efficiency, making it suitable for battery-powered devices.
  • High-Speed Switching: Engineered for fast switching applications, this FET enables quick transitions between on and off states, which is beneficial for high-frequency circuits.
  • Dual N-Channel MOSFET: The dual configuration allows for the integration of two independent N-Channel MOSFETs in a single package, saving valuable PCB space and simplifying circuit design.
  • Ultra-Small Package: The DMG1016UDWQ-7 is housed in an ultra-small DFN2010 package, which is optimized for minimal footprint and low-profile applications.
  • Low Threshold Voltage: With a low gate threshold voltage, this device can be driven at lower voltages, which is advantageous for low-voltage operations and helps to reduce power consumption.

Applications

  • Power Management Circuits
  • Load Switches
  • Battery Protection
  • Portable Devices
  • DC-DC Converters
  • Energy Harvesting

Technical Specifications

  • Drain-Source Voltage (Vds): 20V
  • Continuous Drain Current (Id): 680mA
  • Power Dissipation (Pd): 540mW
  • On-Resistance (Rds(on)): 600mΩ at Vgs = 4.5V
  • Operating Temperature Range: -55°C to +150°C

With its robust design and small form factor, the DMG1016UDWQ-7 from Diodes Incorporated is an excellent choice for designers looking to enhance the performance and efficiency of their electronic systems while maintaining a compact size. Its advanced features and specifications ensure reliability and longevity in a wide array of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
470+ $0.1073 $50.4310
1,000+ $0.1005 $100.5000
1,545+ $0.0971 $150.0195
2,215+ $0.0904 $200.2360
2,875+ $0.0870 $250.1250
3,590+ $0.0836 $300.1240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 84,000 pieces
MOQ: 470 pcs
Order Increment : 1 pcs
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