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DMC3060LVT-7

Part No DMC3060LVT-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 25V-30V TSOT26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 395pF @ 15V, 324pF @ 15V
Power - Max 830mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-23-6
Base Product Number DMC3060
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376898-DMC3060LVT-7
Ultra Librarian 3D Model Ultra Librarian DMC3060LVT-7 CAD Model

Description

DMC3060LVT-7 - Diodes Incorporated

The DMC3060LVT-7 is a high-performance, enhancement mode field-effect transistor (MOSFET) from Diodes Incorporated. This MOSFET is a part of the company's extensive line of power management devices, designed to cater to a broad range of applications, including but not limited to power supplies, DC-DC converters, and motor drives.

Key Features

  • Device Type: MOSFET
  • Channel Type: N-Channel
  • Configuration: Single
  • Drain-Source Voltage (V<sub>DS): 30V
  • Continuous Drain Current (I<sub>D): 8A
  • Power Dissipation (P<sub>D): 2.5W
  • R<sub>DS(on): As low as 20mΩ at V<sub>GS = 10V
  • Operating Temperature: -55°C to +150°C
  • Package / Case: SOT-23-6L

Advanced Technology

The DMC3060LVT-7 utilizes advanced trench technology to provide excellent R<sub>DS(on) with low gate charge. This results in a device that not only conserves energy but also optimizes the efficiency of the system it is incorporated into. The low threshold voltage ensures that the MOSFET can be driven at lower voltages, making it suitable for low-voltage applications.

High Reliability

Diodes Incorporated has designed the DMC3060LVT-7 with reliability in mind. It features a robust and durable construction that can withstand high energy pulses in the avalanche and commutation mode, which is critical for demanding applications. Additionally, the MOSFET is characterized by its high thermal performance, which ensures stability and longevity even under varying environmental conditions.

Applications

With its compact SOT-23-6L package, the DMC3060LVT-7 is ideal for space-constrained applications. It is widely used in power management tasks for portable devices, consumer electronics, and other systems where efficient power conversion is necessary. Its fast switching speed and low on-resistance make it a preferred choice for high-efficiency power applications.

For detailed specifications, application notes, and additional resources, interested parties are encouraged to visit the Diodes Incorporated official website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2036 $50.9000
525+ $0.1907 $100.1175
815+ $0.1843 $150.2045
1,170+ $0.1714 $200.5380
1,520+ $0.1650 $250.8000
1,895+ $0.1585 $300.3575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,450 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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