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BSS123-13-F

Part No BSS123-13-F
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Diodes Incorporated
Win Source Part Number 237359-BSS123-13-F
Popularity Low
Supply and Demand Status Balance
Family Name BSS123
Introduction Date September 19, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian BSS123-13-F CAD Model

Description

The BSS123-13-F from Diodes Incorporated is a high-performance, N-Channel Logic Level Enhancement Mode Field Effect Transistor (MOSFET) designed for a wide range of applications. This compact and efficient MOSFET is ideal for use in power management, load switching, and other general-purpose switching applications where a high-speed, low-threshold device is required.

Key Features

  • Low On-Resistance: The BSS123-13-F boasts a low on-state resistance, ensuring minimal power loss and heat generation during operation, which is critical for maintaining efficiency in power-sensitive designs.
  • High-Speed Switching: With its fast switching speed, this MOSFET is suitable for high-frequency applications, providing rapid response times and improved performance in circuits where timing is crucial.
  • Low Threshold Voltage: The device features a low gate threshold voltage, making it compatible with logic-level signals and easily driven by microcontrollers or other low-voltage logic circuits.
  • Surface-Mount Package: The BSS123-13-F comes in an SOT-23 package, which is ideal for space-constrained applications. Its small footprint allows for high-density mounting and is suitable for automated assembly processes.

Electrical Characteristics

The BSS123-13-F has a continuous drain current (ID) of 170 mA and a maximum drain-source voltage (VDS) of 100V. Its low gate threshold voltage (VGS(th)) typically ranges from 0.8V to 3V, which facilitates easy interfacing with logic-level devices. Additionally, it has a low input capacitance and a total power dissipation of 360 mW, making it an energy-efficient choice for your circuit designs.

Applications

This MOSFET is versatile and can be used in a variety of applications, including:

  • Power Management
  • DC/DC Converters
  • Battery Management Systems
  • Motor Control
  • Relay Replacement
  • Load/Line Switching

With its robust performance and compact size, the BSS123-13-F from Diodes Incorporated is an excellent choice for designers looking for a reliable and efficient solution for their switching needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,425+ $0.0351 $50.0175
3,475+ $0.0288 $100.0800
5,380+ $0.0279 $150.1020
7,410+ $0.0270 $200.0700
9,580+ $0.0261 $250.0380
12,825+ $0.0234 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 320,000 pieces
MOQ: 1425 pcs
Order Increment : 1 pcs
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