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Same model may have multiple batches, images only for reference.
S29GL512T11TFB010 Real Image
Same model may have multiple batches, images only for reference.

S29GL512T11TFB010

Part No S29GL512T11TFB010
Manufacturer Cypress Semiconductor Corp
Catalog Unclassified Memory
Description IC FLASH 512MBIT PARALLEL 56TSOP  /  FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 110 ns 56-TSOP
Datasheet
S29GL512T11TFB010 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series GL-T
Package Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mb (64M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Access Time 110 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 105°C (TA)
Mounting SMD (SMT)
Package / Case 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Base Product Number S29GL512
Standard Package 910
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Win Source Part Number 1254766-S29GL512T11TFB010
Ultra Librarian 3D Model Ultra Librarian S29GL512T11TFB010 CAD Model

Description

The Cypress Semiconductor Corp S29GL512T11TFB010 is a FLASH - NOR non-volatile memory device that has a memory size of 512Mb (64M x 8).

  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: parallel
  • Voltage Supply: 2.7V ~ 3.6V
  • Package/Case: 56-TFSOP
  • Temperature Range: -40°C ~ 105°C

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