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Same model may have multiple batches, images only for reference.
S29GL512T11DHIV23 Real Image
Same model may have multiple batches, images only for reference.

S29GL512T11DHIV23

Part No S29GL512T11DHIV23
Manufacturer Cypress Semiconductor Corp
Catalog Unclassified Memory
Description IC FLASH 512MBIT PARALLEL 64FBGA  /  FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 110 ns 64-FBGA (9x9)
Datasheet
S29GL512T11DHIV23 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series GL-T
Package Tape & Reel (TR)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mb (64M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Access Time 110 ns
Voltage - Supply 1.65V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 64-LBGA
Supplier Device Package 64-FBGA (9x9)
Base Product Number S29GL512
Standard Package 2,200
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Win Source Part Number 1254808-S29GL512T11DHIV23
Ultra Librarian 3D Model Ultra Librarian S29GL512T11DHIV23 CAD Model

Description

The S29GL512T11DHIV23 is a 512Mb (64M x 8) non-volatile FLASH - NOR memory integrated circuit from Cypress Semiconductor Corp, which operates with a supply voltage of 1.65V ~ 3.6V and has an access time of 110 ns.

  • Package: 64-LBGA
  • Temperature Range: -40°C to 85°C (TA)
  • Application Use: in various applications such as automotive, industrial, and consumer electronics
  • Memory Interface: parallel
  • Write Cycle Times: word and page write cycle times of 60ns
  • REACH: REACH unaffected
  • ECCN: 3A991B1A

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