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CY7C2265KV18-550BZXC

Part No CY7C2265KV18-550BZXC
Manufacturer Cypress Semiconductor Corp
Catalog SRAM
Description IC SRAM 36MBIT PARALLEL 165FBGA
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits (ICs)
Features SRAM - Synchronous, QDR II+ Memory IC 36Mb (1M x 36) Parallel 165-FBGA (13x15)
Manufacturer Cypress Semiconductor Corp
Package Tray
Operating Temperature Range 0°C ~ 70°C (TA)
Mounting Surface Mount
Package 165-LBGA
Case / Package 165-FBGA (13x15)
Family Name CY7C2265
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Other Part Number -CY7C2265KV18-550BZXC, CY7C2265KV18550BZXC, 2266-CY7C2265KV18-550BZXC, 2015-CY7C2265KV18-550BZXC
Quantity per package 136
Popularity High
Supply and Demand Status Balance
Win Source Part Number 916465-CY7C2265KV18-550BZXC
Ultra Librarian 3D Model Ultra Librarian CY7C2265KV18-550BZXC CAD Model

Description

The CY7C2265KV18-550BZXC is a high-performance synchronous pipelined burst SRAM (Static Random-Access Memory) device from Cypress Semiconductor. This SRAM is designed for applications requiring high bandwidth and low latency data access, making it suitable for networking, telecommunications, and high-performance computing systems.

Applications

  • Networking equipment (routers, switches)
  • Telecommunications infrastructure
  • High-performance computing systems
  • Cache memory
  • Data buffering

Features

  • High-speed clock frequency: Up to 550 MHz
  • Synchronous pipelined burst architecture
  • Internal self-timed write cycle
  • Echo bus operation supports high bandwidth
  • Byte write enable
  • Single 1.8V power supply
  • Available in a BGA (Ball Grid Array) package

Benefits

  • High Bandwidth: The synchronous pipelined burst architecture allows for rapid data transfer rates, crucial for demanding applications.
  • Low Latency: Fast access times ensure minimal delays in data retrieval and storage.
  • Simplified System Design: The internal self-timed write cycle simplifies memory control logic.
  • Reduced Power Consumption: The 1.8V power supply contributes to lower power consumption, extending battery life in portable applications and reducing overall system power requirements.
  • Compact Footprint: The BGA package enables high-density mounting, minimizing board space requirements.

Technical Specifications

The CY7C2265KV18-550BZXC operates with a 1.8V power supply. It features a synchronous interface, meaning all operations are synchronized to an external clock signal. The device utilizes a burst architecture, allowing multiple data words to be transferred in a single burst, increasing data throughput. The on-chip address counters simplify burst operations. Byte write enable functionality provides flexibility in data manipulation, allowing individual bytes within a word to be written. The specific temperature range and package details (BZXC) should be confirmed via the Cypress datasheet.

This SRAM is specifically engineered to meet the stringent performance requirements of modern high-speed systems. Its combination of speed, low power consumption, and compact form factor makes it a suitable choice for designers seeking to optimize system performance and efficiency. Consult the official Cypress Semiconductor datasheet for comprehensive specifications and application notes.

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