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Same model may have multiple batches, images only for reference.
CY7C1911KV18-300BZC Real Image
Same model may have multiple batches, images only for reference.

CY7C1911KV18-300BZC

Part No CY7C1911KV18-300BZC
Manufacturer Cypress Semiconductor Corp
Catalog SRAM
Description 18-Mbit QDR® II SRAM Four-Word Burst Architecture
Datasheet
CY7C1911KV18-300BZC Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits (ICs)
Manufacturer Cypress Semiconductor Corp
Packaging Tray
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, QDR II
Memory Size 18Mb (2M x 9)
Clock Frequency 300MHz
Memory Interface Parallel
Operating Supply Voltage 1.7 V ~ 1.9 V
Operating Temperature Range 0°C ~ 70°C (TA)
Mounting SMD
Package 165-LBGA
Manufacturer Package 165-FBGA (13x15)
Win Source Part Number 1165327-CY7C1911KV18-300BZC
Manufacturer Homepage www.cypress.com
Popularity Medium
Supply and Demand Status Limited
Family Name CY7C1911KV18
Introduction Date December 03, 2003
ECCN 3A991.b.2.a
Country of Origin Thailand
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian CY7C1911KV18-300BZC CAD Model

Description

The CY7C1911KV18-300BZC is a high-performance CMOS synchronous SRAM organized as 2M words by 9 bits.

  • Manufacturer: Cypress Semiconductor Corp
  • Operating Voltage: Single 1.7V to 1.9V power supply
  • Standby Current: Less than 1 mA
  • Package: 165-ball BGA
  • Compliance: RoHS-compliant
  • Application: Battery backup non-volatile memory applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.2676 $53.0704
10+ $10.8863 $108.8630
15+ $10.5461 $158.1915
20+ $10.2059 $204.1180
26+ $9.8657 $256.5082
34+ $8.8451 $300.7334
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