The CY7C1009BN15VCT is a high-performance CMOS static RAM organized as 128K words by 8 bits. It's manufactured by Cypress Semiconductor and designed for memory applications requiring fast access times and low power consumption.

Applications

• Cache memory for microprocessors
• Buffer memory in data acquisition systems
• High-speed storage in networking equipment
• Image processing applications
• Embedded systems requiring fast memory access

Features

• High speed: 15 ns access time
• Low active power: 110 mA (typical)
• Low standby power: 20 mA (typical)
• Single 5V ±10% power supply
• TTL-compatible inputs and outputs
• Available in a 32-pin SOJ package
• Automatic power-down when deselected

Benefits

• Fast access times improve system performance and responsiveness.
• Low power consumption extends battery life in portable applications.
• TTL compatibility simplifies interfacing with other digital logic circuits.
• Automatic power-down reduces power consumption when the device is not actively being used.
• The SOJ package allows for efficient use of board space.

Technical Specifications

The CY7C1009BN15VCT operates from a single 5V power supply and features TTL-compatible inputs and outputs. Its fast access time of 15ns makes it suitable for high-speed memory applications. The device also offers low active and standby power consumption, contributing to energy efficiency. The 128K x 8 bit organization provides ample storage capacity for various data and code storage requirements. This SRAM is designed for reliable operation over a wide temperature range.

Important Note: Always refer to the Cypress Semiconductor datasheet for the most accurate and up-to-date specifications and application information.