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Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 6V
Frequency - Transition 12GHz
Noise Figure (dB Typ @ f) 1.5dB @ 2GHz
Gain 11dB
Maximum Power Dissipation 180mW
Typical Gain (hFE) (Min) 75 @ 10mA, 3V
Maximum Current Collector 30mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-143
Win Source Part Number 4711-2SC4957-T1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC4957-T1 CAD Model

Description

Product Overview

The 2SC4957-T1 transistor is a high-performance NPN semiconductor device, acclaimed for its robust versatility and efficiency. Designed to support high-speed switching and amplification tasks, this component is integral to modern electronic systems seeking precision and reliability.

Features and Benefits

  • Fast switching speeds: The 2SC4957-T1 excels in high-speed applications, enabling quick response times and efficient circuit performance.
  • Minimal power dissipation: Its low power dissipation ensures minimal energy loss, contributing to enhanced system efficiency and sustainability.
  • High current gain: The high current gain attribute facilitates high-efficiency amplification in diverse applications.
  • Stable thermal characteristics: Provides consistent performance across varying temperature conditions, ensuring reliability.

Applications

This transistor is highly suited for a variety of applications, including:

  • High-frequency amplifiers
  • Switching power supplies
  • Data transmission devices
  • Automotive electronic systems
  • Electrical motor drivers

Additional Details

With a focus on delivering exceptional performance in complex environmental conditions, the 2SC4957-T1 is engineered to provide reliability and best-in-class efficiency. Its adaptable design allows for seamless integration into a wide array of circuit configurations. Whether engaging in new projects or improving existing designs, this transistor offers a dependable solution for enhancing power circuitry, while its compact design supports both performance and efficiency improvements.

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