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Manufacturer Anpec
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 817627-APM1403SC
Ultra Librarian 3D Model Ultra Librarian APM1403SC CAD Model

Description

The APM1403SC is a P-channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Anpec Electronics. It is designed for load switching and power management applications, especially in portable and battery-operated devices where efficiency and size are critical.

Applications:

  • Load Switching: Controlling power to various circuits in portable devices.
  • Power Management: Battery charging and discharging circuits.
  • DC-DC Conversion: Synchronous rectification in buck converters.
  • Backlight Inverters: Driving LEDs in display backlights.
  • Power Distribution: Controlling power rails in embedded systems.

Features:

  • P-Channel MOSFET: Suitable for high-side switching applications.
  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Low Gate Threshold Voltage (VGS(th)): Allows for operation with low voltage logic levels.
  • Fast Switching Speed: Enables efficient operation in switching applications.
  • Small Package: Typically available in a small SOT-23 or similar package, saving board space.
  • Lead-Free and RoHS Compliant: Meets environmental standards.

Benefits:

  • High Efficiency: Low on-resistance minimizes power dissipation and improves energy efficiency.
  • Compact Design: Small package size allows for dense circuit layouts.
  • Simplified Circuitry: P-channel configuration simplifies high-side switching.
  • Long Battery Life: Reduced power loss contributes to extended battery life in portable devices.
  • Environmentally Friendly: Compliant with RoHS environmental standards.

Additional Details:

The APM1403SC has a typical drain-source voltage (VDS) rating of -20V, and a continuous drain current (ID) rating that varies depending on the specific package and operating conditions. The on-resistance (RDS(on)) is typically specified at a gate-source voltage (VGS) of -4.5V. The gate threshold voltage (VGS(th)) is typically between -0.4V and -1.0V. For precise specifications, including the absolute maximum ratings, thermal characteristics, and switching characteristics, refer to the manufacturer's datasheet. Proper gate drive circuitry and thermal management techniques are essential for optimal performance and reliability. It's also recommended to use appropriate decoupling capacitors close to the MOSFET to minimize switching noise.

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