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AOD5B65M1H

Part No AOD5B65M1H
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog OEM Parts (A - B)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Package Identifier TO252-3
Win Source Part Number 994023-AOD5B65M1H
Categories OEM Parts(A-B)
Manufacturer Alpha & Omega Semiconductor Inc.
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian AOD5B65M1H CAD Model

Description

The AOD5B65M1H is a 650V MOSFET from Alpha & Omega Semiconductor, designed for high-voltage, high-power applications. This MOSFET utilizes advanced super junction technology to achieve low on-resistance and gate charge, enabling high efficiency and reliable performance in demanding environments. Its robust design makes it well-suited for applications requiring high breakdown voltage and fast switching speeds.

Applications

  • Power Factor Correction (PFC)
  • Flyback Converters
  • LED Lighting
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)

Features

  • 650V Breakdown Voltage: Ensures safe operation in high-voltage applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • Low Gate Charge (Qg): Reduces switching losses and improves efficiency at high frequencies.
  • Fast Switching Speed: Enables high-frequency operation.
  • Robust Body Diode: Improves reliability and robustness.

Benefits

  • High Efficiency: Low on-resistance and gate charge contribute to reduced power losses and higher efficiency in power conversion applications.
  • Improved Thermal Performance: Allows for operation at higher power levels with enhanced heat dissipation.
  • Increased System Reliability: Robust design and avalanche capability provide enhanced reliability and protection against voltage transients.
  • Simplified Design: Low gate charge simplifies driving requirements and reduces the need for complex gate drive circuitry.
  • Environmentally Friendly: RoHS compliant, ensuring compliance with environmental regulations.

Additional Details

The AOD5B65M1H features a drain-source voltage (Vds) rating of 650V and a continuous drain current (Id) that varies depending on the case temperature. It is designed for optimal performance in high-voltage power conversion applications. The device is typically available in a TO-252 package.

The AOD5B65M1H MOSFET incorporates advanced super junction technology, enabling a superior figure of merit (FOM) that balances on-resistance and gate charge. This results in exceptional switching performance and reduced power losses. Its robust design and avalanche capability ensure reliable operation in demanding environments.

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